Impact of germanium on vacancy clustering in germanium-doped silicon
نویسندگان
چکیده
منابع مشابه
Germanium epitaxy on silicon
With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In...
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To meet the unprecedented demands for data transmission speed and bandwidth silicon integrated photonics that can generate, modulate, process and detect light signals is being developed. Integrated silicon photonics that can be built using existing CMOS fabrication facilities offers the tantalizing prospect of a scalable and cost-efficient solution to replace electrical interconnects. Silicon, ...
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Monte Carlo simulation of carrier dynamics and far-infrared absorption was performed to test the importance of electron-electron interaction in selectively doped multi-layer p-Ge laser at high doping concentration. The laser design exploits the known widely tunable mechanism of THz amplification on inter-sub-band transitions in p-Ge, but with spatial separation of carrier accumulation and relax...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2009
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3056387